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mrf13750h MRF13750HS 1 rf device data nxp semiconductors rf power ldmos transistors n--channel enhancement--mode lateral mosfets these 750 w cw transistors are designed for industrial, scientific and medical (ism) applications in the 700 to 1300 mhz frequency range. the transistors are capable of cw or pulse power in narrowband operation. typical performance: v dd =50vdc frequency (mhz) signal type p out (w) g ps (db) ? d (%) 915 (1) cw 750 19.3 67.1 915 (2) pulse (100 ? sec, 10% duty cycle) 850 20.5 69.2 1300 (3) cw 700 17.2 56.0 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 915 (2) pulse (100 ? sec, 10% duty cycle) > 10:1 at all phase angles 15.9 peak (3 db overdrive) 50 no device degradation 1. measured in 915 mhz narrowband reference circuit (page 5). 2. measured in 915 mhz narrowband production test fixture (page 11). 3. measured in 1300 mhz narrowband reference circuit (page 8). features ? internally input pre--matched for ease of use ? device can be used single--ended or in a push--pull configuration ? characterized for 30 to 50 v ? suitable for linear applications with appropriate biasing ? integrated esd protection ? recommended driver: mrfe6vs25gn (25 w) ? included in nxp product longevity program with assured supply for a minimum of 15 years after launch typical applications ? 915 mhz industrial heati ng/weldin g systems ? 1300 mhz particle accelerators document number: mrf13750h rev. 1, 01/2018 nxp semiconductors technical data 700?1300 mhz, 750 w cw, 50 v rf power ldmos transistors mrf13750h MRF13750HS (top view) drain a 31 figure 1. pin connections 42 drain b gate a gate b note: the backside of the package is the source terminal for the transistor. ni--1230h--4s mrf13750h ni--1230s--4s MRF13750HS ? 2017?2018 nxp b.v.
2 rf device data nxp semiconductors mrf13750h MRF13750HS table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +105 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 55, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 1333 6.67 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case cw: case temperature 82 ? c, 700 w cw, 50 vdc, i dq(a+b) = 150 ma, 915 mhz r ? jc 0.15 ? c/w thermal impedance, junction to case pulse: case temperature 76 ? c, 850 w peak, 100 ? sec pulse width, 10% duty cycle, 50 vdc, i dq(a+b) = 200 ma, 915 mhz z ? jc 0.014 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v charge device model (per jesd22--c101) c3, passes 1200 v table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc drain--source breakdown voltage (v gs =0vdc,i d =10 ? a) v (br)dss 105 ? ? vdc zero gate voltage drain leakage current (v ds =55vdc,v gs =0vdc) i dss ? ? 1 ? adc zero gate voltage drain leakage current (v ds = 105 vdc, v gs =0vdc) i dss ? ? 10 ? adc on characteristics gate threshold voltage (4) (v ds =10vdc,i d = 275 ? adc) v gs(th) 1.3 1.72 2.3 vdc gate quiescent voltage (v dd =50vdc,i dq(a+b) = 200 madc, measured in functional test) v gs(q) 1.7 2.2 2.7 vdc drain--source on--voltage (4) (v gs =10vdc,i d =2.8adc) v ds(on) 0.1 0.23 0.6 vdc dynamic characteristics (4,5) reverse transfer capacitance (v ds =50vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.94 ? pf output capacitance (v ds =50vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 63.8 ? pf 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 4. each side of device measured separately. 5. part internally input pre--matched. (continued)
mrf13750h MRF13750HS 3 rf device data nxp semiconductors table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in nxp narrowband production test fixture, 50 ohm system) v dd =50vdc,i dq(a+b) = 200 ma, p out = 850 w peak (85 w avg.), f = 915 mhz, 100 ? sec pulse width, 10% duty cycle power gain g ps 19.5 20.5 21.5 db drain efficiency ? d 66.0 69.2 ? % table 5. load mismatch/ruggedness (in nxp narrowband production test fixture, 50 ohm system) i dq(a+b) = 200 ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 915 pulse (100 ? sec, 10% duty cycle) > 10:1 at all phase angles 15.9 peak (3 db overdrive) 50 no device degradation table 6. ordering information device tape and reel information package mrf13750hr5 r5 suffix = 50 units, 56 mm tape width, 13--inch reel ni--1230h--4s MRF13750HSr5 ni--1230s--4s
4 rf device data nxp semiconductors mrf13750h MRF13750HS typical characteristics 1000 ?1.854 slope (mv/ ? c) i dq (ma) 1 100 020 10 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 10 measured with ? 30 mv(rms)ac @ 1 mhz v gs =0vdc note: each side of device measured separately. 10000 30 40 50 1000 figure 3. normalized v gs versus quiescent current and case temperature normalized v gs(q) t c , case temperature ( ? c) 1.06 1.04 1.02 1 0.98 0.96 0.94 100 ?50 0 ?25 25 50 75 v dd =50vdc 200 500 750 0.92 1.08 c oss c rss i dq(a+b) = 200 ma 500 ma 750 ma 1000 ma ?2.168 ?1.992 ?1.903 250 10 8 90 t j , junction temperature ( ? c) 10 6 10 5 10 4 110 130 150 170 190 mttf (hours) 210 230 10 7 v dd =50vdc 26.2 amps 22.3 amps i d = 17.3 amps figure 4. mttf versus junction temperature ? cw note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http:/www.nxp.com/rf/calculators .
mrf13750h MRF13750HS 5 rf device data nxp semiconductors 915 mhz narrowband reference circuit ? 3.0 ?? 3.8 ? (7.6 cm ? 9.7 cm) table 7. 915 mhz narrowband performance (in nxp reference circuit, 50 ohm system) v dd =50vdc,i dq(a+b) = 150 ma, p in =8.8w frequency (mhz) signal type p out (w) g ps (db) ? d (%) 915 cw 750 19.3 67.1
6 rf device data nxp semiconductors mrf13750h MRF13750HS 915 mhz narrowband reference circuit ? 3.0 ?? 3.8 ? (7.6 cm ? 9.7 cm) figure 5. mrf13750h narrowband reference circuit component layout ? 915 mhz *c2, c3 and c4 are mounted vertically. c5 c7 r1 r11 r2 c6 c8 r3 c15 r7 r6 r4 r5 u1 r9 r8 c14 c13 c11 c9 c2* c3* c4* c10 c12 r10 q2 c1 rev. 0 d94455 q1 table 8. mrf13750h narrowband reference circui t component designations and values ? 915 mhz part description part number manufacturer c1, c2, c3, c4, c5, c6, c11, c12 47 pf chip capacitor atc100b470jt500xt atc c7, c8, c15 1 ? f chip capacitor grm21br71h105ka12l murata c9, c10 1000 pf chip capacitor atc100b102jt50xt atc c13, c14 470 ? f, 100 v electrolytic capacitor mcgpr100v477m16x32--rh multicomp q1 rf power ldmos transistor mrf13750h nxp q2 npn bipolar transistor bc847alt1g on semiconductor r1, r2 10 ?? 1/4 w chip resistor crcw120610r0jnea vishay r3 5k ? multi--turn cermet trimmer potentiometer 3224w--1--502e bourns r4 20 k ?? 1/10 w chip resistor rr1220p--203--b--t5 susumu r5 4.7 k ?? 1/10 w chip resistor rr1220p--472--d susumu r6, r8 1.2 k ?? 1/8 w chip resistor crcw08051k20fkea vishay r7 10 ?? 1/8 w chip resistor crcw080510r0fkea vishay r9 2.2 k ?? 1/8 w chip resistor crcw08052k20jnea vishay r10 4.7 k ?? 1/2 w chip resistor crcw12104k70fkea vishay r11 2 ?? 1/2 w chip resistor erj--14yj2r0u panasonic u1 voltage regulator 5 v, micro8 lp2951acdmr2g on semiconductor pcb rogers tc600, 0.025?, ? r =6.15 d94455 mtl
mrf13750h MRF13750HS 7 rf device data nxp semiconductors typical characteristics ? 915 mhz narrowband reference circuit p in , input power (watts) 16 0 p out , output power (watts) 6 24 900 0 v dd =50vdc,i dq = 150 ma, f = 915 mhz 10 81214 800 700 600 500 400 300 200 100 915 690 800 f (mhz) p1db (w) p3db (w) figure 6. cw output power versus input power 20 18 16 p out , output power (watts) figure 7. power gain and drain efficiency versus cw output power g ps , power gain (db) ? d, drain efficiency (%) 19 17 21 0 100 200 80 70 60 50 40 30 20 22 90 23 ? d g ps v dd =50vdc,i dq = 150 ma, f = 915 mhz 400 15 300 500 600 700 800 900 10 f mhz z source ? z load ? 915 0.58 + j0.24 0.59 + j1.19 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 8. narrowband series equivalent source and load impedance ? 915 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
8 rf device data nxp semiconductors mrf13750h MRF13750HS 1300 mhz narrowband reference circuit ? 3.0 ?? 3.9 ? (7.6 cm ? 9.9 cm) table 9. 1300 mhz narrowband performance (in nxp reference circuit, 50 ohm system) v dd =50vdc,i dq(a+b) = 150 ma, p in =11w frequency (mhz) signal type p out (w) g ps (db) ? d (%) 1300 cw 700 17.2 56.0
mrf13750h MRF13750HS 9 rf device data nxp semiconductors 1300 mhz narrowband reference circuit ? 3.0 ?? 3.9 ? (7.6 cm ? 9.9 cm) figure 9. mrf13750h narrowband reference circuit component layout ? 1300 mhz c5 r11 r1 c4 c8 c2 c3 c9 c1 c6 c7 c14 r6 r2 r7 c10 c11 r4 r5 q2 r9 r8 c12 c13 r3 u1 d100209 r10 rev. 0 q1 table 10. mrf13750h narrowband r eference circuit component d esignations and values ? 1300 mhz part description part number manufacturer c1, c4, c5, c10, c11 24 pf chip capacitor atc100b240jt500xt atc c2, c3 18 pf chip capacitor atc100b180jt500xt atc c6, c7, c14 1 ? f chip capacitor grm21br71h105ka12l murata c8, c9 1000 pf chip capacitor atc100b102jt50xt atc c12, c13 470 ? f, 100 v electrolytic capacitor mcgpr100v477m16x32-rh multicomp r1, r2 10 ? , 1/4 w chip resistor crcw120610r0jnea vishay r3 5k ? multi--turn cermet trimmer potentiometer 3224w-1-502e bourns r4 20 k ? , 1/8 w chip resistor crcw080520k0fkea vishay r5 4.7 k ? , 1/8 w chip resistor crcw08054k70fkea vishay r6, r8 1.2 k ? , 1/8 w chip resistor crcw08051k20fkea vishay r7 10 ? , 1/8 w chip resistor crcw080510r0fkea vishay r9 2.2 k ? , 1/8 w chip resistor crcw08052k20jnea vishay r10 4.7 k ? , 1/2 w chip resistor crcw12104k70fkea vishay r11 3.3 ? , 1/2 w chip resistor erj-14yj3r3u panasonic q1 rf power ldmos transistor mrf13750h nxp q2 npn bipolar transistor bc847alt1g on semiconductor u1 voltage regulator 5 v, micro8 lp2951acdmr2g on semiconductor pcb arlon tc350, 0.020 ? , ? r =3.5 d100209 mtl
10 rf device data nxp semiconductors mrf13750h MRF13750HS typical characteristics ? 1300 mhz narrowband reference circuit p in , input power (watts) 500 400 p out , output power (watts) 300 20 16 12 08 4 600 700 0 800 v dd =50vdc,i dq(a+b) = 150 ma, f = 1300 mhz 200 100 1300 600 710 f (mhz) p1db (w) p3db (w) figure 10. cw output power versus input power p out , output power (watts) figure 11. power gain and drain efficiency versus cw output power g ps , power gain (db) ? d, drain efficiency (%) 17.5 17 19 0 100 55 45 35 25 20 ? d g ps 16 16.5 18 18.5 19.5 50 40 30 20 60 v dd =50vdc,i dq(a+b) = 150 ma, f = 1300 mhz 200 300 400 500 600 700 800 f mhz z source ? z load ? 1300 0.64 + j1.92 0.39 + j0.92 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 12. narrowband series equivalent source and load impedance ? 1300 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
mrf13750h MRF13750HS 11 rf device data nxp semiconductors 915 mhz narrowband production test fixture ? 4.0 ?? 6.0 ? (10.2 cm ? 15.2 cm) c20* c21* c16* figure 13. mrf13750h narrowban d production test fixture component layout ? 915 mhz *c14, c15, c16, c17, c18, c19, c20 and c21 are mounted vertically. c2 c17* c23 c4 c6 c8 r2 c13 l2 c14* c15* c18* c19* c12 l1 c11 r1 c7 c1 c5 c3 c24 c25 c9 c10 b2 c22 c27 c29 c26 c28 b1 cut out area rev. 0 d87851 coax1 coax2 coax3 coax4 table 11. mrf13750h narrowband production test fi xture component designations and values ? 915 mhz part description part number manufacturer b1, b2 rf bead, short 2743019447 fair--rite c1, c2 22 ? f, 35 v tantalum capacitor t491x226k035at kemet c3, c4 2.2 ? f chip capacitor c1825c225j5rac kemet c5, c6 0.1 ? f chip capacitor cdr33bx104akws avx c7, c8, c22, c23 36 pf chip capacitor atc100b360jt500xt atc c9, c10 10 pf chip capacitor atc100b100jt500xt atc c11 13 pf chip capacitor atc100b130jt500xt atc c12, c13 12 pf chip capacitor atc100b120jt500xt atc c14, c15 7.5 pf chip capacitor atc100b7r5ct500xt atc c16, c17, c18, c19, c20, c21 36 pf chip capacitor atc100b360jt500xt atc c24, c25 0.01 ? f chip capacitor c1825c103k1gac--tu kemet c26, c27, c28, c29 470 ? f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp coax1, 2, 3, 4 25 ? , semi rigid coax, 2.2 ? shield length ut--141c--25 micro coax l1, l2 5 nh inductor a02tklc coilcraft r1, r2 10 ? , 3/4 w chip resistor crcw201010r0fkef vishay pcb arlon, ad255a, 0.03 ? , ? r =2.55 d87851 mtl
12 rf device data nxp semiconductors mrf13750h MRF13750HS typical characteristics ? 915 mhz, t c =25 _ c production test fixture 56 54 48 52 38 36 34 28 32 30 58 60 26 50 62 p in , input power (dbm) p out , output power (dbm) peak 0 v gs , gate--source voltage (volts) figure 14. output power versus gate--source voltage at a constant input power 0 p out , output power (watts) peak 1200 1000 800 600 400 1.5 2 2.5 3 p in =8.8w p in =4.4w 0.5 1 v dd = 50 vdc, f = 915 mhz pulse width = 100 msec, 10% duty cycle 200 915 802 912 f (mhz) p1db (w) p3db (w) figure 15. output power versus input power 24 22 20 p out , output power (watts) peak figure 16. power gain and drain efficiency versus output power and quiescent current g ps , power gain (db) ? d, drain efficiency (%) 23 21 30 100 1000 0 80 70 60 50 40 30 20 90 ? d 19 18 10 ? d v dd =50vdc,i dq(a+b) = 200 ma, f = 915 mhz pulse width = 100 ? sec, 10% duty cycle 17 15 16 20 100 1000 10 80 70 60 50 40 30 20 90 p out , output power (watts) peak figure 17. power gain and drain efficiency versus output power g ps , power gain (db) ? d, drain efficiency (%) 0 p out , output power (watts) peak figure 18. power gain versus output power and drain--source voltage 24 g ps , power gain (db) 21 20 19 18 17 600 800 1000 23 22 v dd =30v 200 400 16 17 t c = ?40 _ c 21 20 19 18 22 23 24 35 v g ps 0 v dd =50vdc,i dq(a+b) = 200 ma, f = 915 mhz pulse width = 100 msec, 10% duty cycle 46 44 40 42 44 16 15 25 _ c 85 _ c 85 _ c 25 _ c ?40 _ c 15 12 14 13 40 v 45 v 50 v v dd = 50 vdc, f = 915 mhz pulse width = 100 ? sec, 10% duty cycle 200 ma 400 ma 600 ma 800 ma 1000 ma 200 ma 400 ma 600 ma 800 ma i dq(a+b) = 1000 ma i dq(a+b) = 200 ma, f = 915 mhz pulse width = 100 ? sec, 10% duty cycle g ps
mrf13750h MRF13750HS 13 rf device data nxp semiconductors 915 mhz narrowband production test fixture f mhz z source ? z load ? 915 3.46 ? j1.76 2.39 + j3.92 z source = test fixture impedance as measured from gate to gate, balanced configuration. z load = test fixture impedance as measured from drain to drain, balanced configuration. figure 19. narrowband series equivalent source and load impedance ? 915 mhz input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ?
14 rf device data nxp semiconductors mrf13750h MRF13750HS package dimensions
mrf13750h MRF13750HS 15 rf device data nxp semiconductors
16 rf device data nxp semiconductors mrf13750h MRF13750HS
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18 rf device data nxp semiconductors mrf13750h MRF13750HS product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1908: solder reflow attach method for high power rf devices in air cavity packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 dec. 2017 ? initial release of data sheet 1 jan. 2018 ? on characteristics, v gs(q) : min and max values updated to reflect recent test results of the device, p. 2
mrf13750h MRF13750HS 19 rf device data nxp semiconductors how to reach us: home page: nxp.com web support: nxp.com/support information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does nxp assume any liability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential o r incidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp and the nxp logo are trademarks of nxp b.v. all other pr oduct or service names are the property of their respective owners. e 2017?2018 nxp b.v. document number: mrf13750h rev. 1, 01/2018

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